The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2010

Filed:

May. 23, 2008
Applicants:

Ji-myoung Lee, Yongin-si, KR;

Min-sang Kim, Seoul, KR;

Eun-jung Yun, Seoul, KR;

Sung-young Lee, Yongin-si, KR;

In-hyuk Choi, Seoul, KR;

Inventors:

Ji-Myoung Lee, Yongin-si, KR;

Min-Sang Kim, Seoul, KR;

Eun-Jung Yun, Seoul, KR;

Sung-Young Lee, Yongin-si, KR;

In-Hyuk Choi, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

A multibit electro-mechanical memory device and a method of manufacturing the same include a substrate, a bit line in a first direction on the substrate, a lower word line in a second direction intersecting the first direction, a pad electrode isolated from a sidewall of the lower word line and connected to the bit line, a cantilever electrode expending in the first direction over the lower word line with a lower void therebetween, and connected to the pad electrode and curved in a third direction vertical to the first and second direction by an electrical field induced by a charge applied to the lower word line, a trap site expending in the second direction over the cantilever electrode with an upper void therebetween, and an upper word line to which a charge to curve the cantilever electrode in a direction of the trap site is applied, and on the trap site.


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