The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2012
Filed:
Mar. 13, 2006
Applicants:
Eun-jung Yun, Seoul, KR;
Sung-young Lee, Gyeonggi-do, KR;
Min-sang Kim, Seoul, KR;
Sung-min Kim, Incheon Metropolitan, KR;
Inventors:
Eun-jung Yun, Seoul, KR;
Sung-young Lee, Gyeonggi-do, KR;
Min-sang Kim, Seoul, KR;
Sung-min Kim, Incheon Metropolitan, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract
Gate-all-around integrated circuit devices include first and second source/drain regions on an active area of an integrated circuit substrate. The first and second source/drain regions form p-n rectifying junctions with the active area. A channel region extends between the first and second source/drain regions. An insulated gate electrode surrounds the channel region.