The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 17, 2011

Filed:

Jan. 29, 2007
Applicants:

Eun-jung Yun, Seoul, KR;

Sung-young Lee, Gyeonggi-do, KR;

Min-sang Kim, Seoul, KR;

Sung-min Kim, Incheon, KR;

Kyoung-hwan Yeo, Seoul, KR;

Inventors:

Eun-Jung Yun, Seoul, KR;

Sung-Young Lee, Gyeonggi-do, KR;

Min-Sang Kim, Seoul, KR;

Sung-Min Kim, Incheon, KR;

Kyoung-Hwan Yeo, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device includes a first active region on a substrate and first and second source/drain regions on the substrate abutting respective first and second sidewalls of the first active region. A first gate structure is disposed on the first active region between the first and second source/drain regions. A second active region is disposed on the first gate structure between and abutting the first and second source/drain regions. A second gate structure is disposed on the second active region overlying the first gate structure.


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