The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Dec. 28, 2012
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Jae-Jong Han, Seoul, KR;
Kong-Soo Lee, Hwaseong-gum, KR;
Yoon-Goo Kang, Yongin-si, KR;
Ho-Kyun An, Seoul, KR;
Seong-Hoon Jeong, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Semiconductor devices, and methods of manufacturing the same, include a field region in a semiconductor substrate to define an active region. An interlayer insulating layer is on the semiconductor substrate. A semiconductor pattern is within a hole vertically extending through the interlayer insulating layer. The semiconductor pattern is in contact with the active region. A barrier region is between the semiconductor pattern and the interlayer insulating layer. The barrier region includes a first buffer dielectric material and a barrier dielectric material. The first buffer dielectric material is between the barrier dielectric material and the semiconductor pattern, and the barrier dielectric material is spaced apart from both the semiconductor pattern and the active region.