The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 01, 2015
Filed:
Aug. 14, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jae-Jong Han, Seoul, KR;
Yoon-Goo Kang, Yongin-si, KR;
Won-Seok Yoo, Hwaseong-si, KR;
Kong-Soo Lee, Hwaseong-si, KR;
Han-Jin Lim, Seoul, KR;
Seong-Hoon Jeong, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2409 (2013.01); H01L 27/2463 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01);
Abstract
A semiconductor device includes a lower interconnection having second conductivity-type impurities on a substrate having first conductivity-type impurities. A switching device is on the lower interconnection. A first blocking layer is provided between the lower interconnection and the switching device. The first blocking layer includes carbon (C), germanium (Ge), or a combination thereof. A second blocking layer may be provided between the substrate and the lower interconnection.