The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2006

Filed:

Jun. 28, 2004
Applicants:

Jae-jong Han, Seoul, KR;

Woo-sung Lee, Yongin-si, KR;

Sang-jin Park, Sungnam-si, KR;

Inventors:

Jae-Jong Han, Seoul, KR;

Woo-Sung Lee, Yongin-si, KR;

Sang-Jin Park, Sungnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
Abstract

A first gate oxide layer pattern having a first thickness is formed in a first region of a substrate and a second gate oxide layer having a second thickness is formed in a second region of a substrate. A surface of the second gate oxide layer is selectively nitrified to form an oxynitride layer, thereby reducing a depletion effect of a poly gate and a fluctuation of threshold voltage.


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