Lake Oswego, OR, United States of America

Been-Yih Jin

This inventor holds 76 USPTO granted patents and 2 published patent applications and 7 EPO patents, primarily in Semiconductor Technology (CPC class H01L). Top assignee: Intel Corporation. Active years: 2004-2019.

USPTO Granted Patents = 76 (Patent Applications = 2)

% Patents Active = 40.8

EPO Patents = 7 (Patent Applications = 6)

Average Co-Inventor Count = 4.6

ph-index = 20

Forward Citations = 1,728(Granted Patents)

Forward Citations (Not Self Cited) = 1,658(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Beaverton, OR (US) (2007 - 2012)
Lake Oswego, CA (US) (2010 - 2013)
Taiwan, CN (2016)
Taipei, TW (2016 - 2018)
Lake Oswego, OR (US) (2004 - 2019)

Company Filing History:

76 out of 56,240

Intel Corporation

patents

Years Active: 2004-2019

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Areas of Expertise:

Semiconductor Fins

High Mobility CMOS

Germanium Quantum Wells

Strained Regions

Nanowire Structures

Transistor Fabrication

Delta Doping

Multi-Gate Devices

Photodetectors

Nanoscale Transistors

Parallel Conduction

Stress Incorporation

76 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10304929 - Two-dimensional condensation for uniaxially strained semiconductor fins (2019-05-28),

2. 10141437 - Extreme high mobility CMOS logic (2018-11-27),

3. 9876014 - Germanium-based quantum well devices (2018-01-23),

4. 9711598 - Two-dimensional condensation for uniaxially strained semiconductor fins (2017-07-18),

5. 9691856 - Extreme high mobility CMOS logic (2017-06-27),

6. 9548363 - Extreme high mobility CMOS logic (2017-01-17),

7. 9478635 - Germanium-based quantum well devices (2016-10-25),

8. 9425256 - Strain inducing semiconductor regions (2016-08-23),

9. 9419140 - Two-dimensional condensation for uniaxially strained semiconductor fins (2016-08-16),

10. 9343302 - Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications (2016-05-17),

11. 9263557 - Techniques for forming non-planar germanium quantum well devices (2016-02-16),

12. 9159835 - Two-dimensional condensation for uniaxially strained semiconductor fins (2015-10-13),

13. 9048266 - Apparatus and methods for improving parallel conduction in a quantum well device (2015-06-02),

14. 8883573 - Isolation for nanowire devices (2014-11-11),

15. 8841180 - Strain-inducing semiconductor regions (2014-09-23),

Title: The Innovative Journey of Inventor Been-Yih Jin

Introduction: Been-Yih Jin, a talented inventor hailing from Lake Oswego, Oregon, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Been-Yih Jin holds several patents in various technological domains, showcasing his versatility and creativity in inventing novel solutions to complex problems.

Career Highlights: Throughout his illustrious career, Been-Yih Jin has consistently pushed the boundaries of innovation, earning recognition for his cutting-edge inventions that have had a profound impact on the industry.

Collaborations: Been-Yih Jin has collaborated with leading tech companies and research institutions, leveraging his expertise to drive collaborative projects that have resulted in groundbreaking inventions and technological advancements.

Conclusion: Been-Yih Jin's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors, with his work continuing to inspire future generations of innovators.