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For the Inventor, By the Inventor

Lake Oswego, OR, United States of America

Been-Yih Jin

USPTO Granted Patents = 76 

 

Average Co-Inventor Count = 4.6

ph-index = 20

Forward Citations = 1,727(Granted Patents)

Forward Citations (Not Self Cited) = 1,658(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Beaverton, OR (US) (2007 - 2012)
  • Lake Oswego, CA (US) (2010 - 2013)
  • Taiwan, CN (2016)
  • Taipei, TW (2016 - 2018)
  • Lake Oswego, OR (US) (2004 - 2019)

Company Filing History:

goldMedal76 out of 54,726 
 
Intel Corporation
 patents

Years Active: 2004-2019

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Areas of Expertise:
Two-Dimensional Condensation
Extreme High Mobility CMOS
Germanium-Based Quantum Well Devices
Strain Inducing Semiconductor Regions
Silicon Germanium Multigate Structures
Nanowire Devices
Tri-Gate Transistor Device
Quantum Well Structure
Tensile Strained NMOS Transistor
Semiconductor on Insulator
Fabrication of Germanium Nanowires
Three Dimensional Strained Quantum Wells
76 patents (USPTO):Explore Patents
1. 10304929 - Two-dimensional condensation for uniaxially strained semiconductor fins (2019-05-28),
2. 10141437 - Extreme high mobility CMOS logic (2018-11-27),
3. 9876014 - Germanium-based quantum well devices (2018-01-23),
4. 9711598 - Two-dimensional condensation for uniaxially strained semiconductor fins (2017-07-18),
5. 9691856 - Extreme high mobility CMOS logic (2017-06-27),
6. 9548363 - Extreme high mobility CMOS logic (2017-01-17),
7. 9478635 - Germanium-based quantum well devices (2016-10-25),
8. 9425256 - Strain inducing semiconductor regions (2016-08-23),
9. 9419140 - Two-dimensional condensation for uniaxially strained semiconductor fins (2016-08-16),
10. 9343302 - Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications (2016-05-17),
11. 9263557 - Techniques for forming non-planar germanium quantum well devices (2016-02-16),
12. 9159835 - Two-dimensional condensation for uniaxially strained semiconductor fins (2015-10-13),
13. 9048266 - Apparatus and methods for improving parallel conduction in a quantum well device (2015-06-02),
14. 8883573 - Isolation for nanowire devices (2014-11-11),
15. 8841180 - Strain-inducing semiconductor regions (2014-09-23),

Title: The Innovative Journey of Inventor Been-Yih Jin

Introduction: Been-Yih Jin, a talented inventor hailing from Lake Oswego, Oregon, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Been-Yih Jin holds several patents in various technological domains, showcasing his versatility and creativity in inventing novel solutions to complex problems.

Career Highlights: Throughout his illustrious career, Been-Yih Jin has consistently pushed the boundaries of innovation, earning recognition for his cutting-edge inventions that have had a profound impact on the industry.

Collaborations: Been-Yih Jin has collaborated with leading tech companies and research institutions, leveraging his expertise to drive collaborative projects that have resulted in groundbreaking inventions and technological advancements.

Conclusion: Been-Yih Jin's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors, with his work continuing to inspire future generations of innovators.

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