The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Jun. 04, 2012
Jack T. Kavalieros, Portland, OR (US);
Nancy Zelick, Portland, OR (US);
Been-yih Jin, Lake Oswego, OR (US);
Markus Kuhn, Beaverton, OR (US);
Stephen M. Cea, Hillsboro, OR (US);
Jack T. Kavalieros, Portland, OR (US);
Nancy Zelick, Portland, OR (US);
Been-Yih Jin, Lake Oswego, OR (US);
Markus Kuhn, Beaverton, OR (US);
Stephen M. Cea, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Techniques are disclosed for enabling multi-sided condensation of semiconductor fins. The techniques can be employed, for instance, in fabricating fin-based transistors. In one example case, a strain layer is provided on a bulk substrate. The strain layer is associated with a critical thickness that is dependent on a component of the strain layer, and the strain layer has a thickness lower than or equal to the critical thickness. A fin is formed in the substrate and strain layer, such that the fin includes a substrate portion and a strain layer portion. The fin is oxidized to condense the strain layer portion of the fin, so that a concentration of the component in the strain layer changes from a pre-condensation concentration to a higher post-condensation concentration, thereby causing the critical thickness to be exceeded.