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For the Inventor, By the Inventor

Hillsboro, OR, United States of America

Markus Kuhn

USPTO Granted Patents = 27

Average Co-Inventor Count = 5.5

ph-index = 8

Forward Citations = 306(Granted Patents)


Location History:

  • Portland, OR (US) (2006 - 2013)
  • Beaverton, OR (US) (2007 - 2019)
  • Hillsboro, OR (US) (2004 - 2021)

Company Filing History:

goldMedal27 out of 54,750 
 
Intel Corporation
 patents

Years Active: 2004-2021

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27 patents (USPTO):Explore Patents
1. 10897009 - Resistive memory cells and precursors thereof, methods of making the same, and devices including the same (2021-01-19),
2. 10516109 - Resistive memory cells and precursors thereof, methods of making the same, and devices including the same (2019-12-24),
3. 10304929 - Two-dimensional condensation for uniaxially strained semiconductor fins (2019-05-28),
4. 9711598 - Two-dimensional condensation for uniaxially strained semiconductor fins (2017-07-18),
5. 9680013 - Non-planar device having uniaxially strained semiconductor body and method of making same (2017-06-13),
6. 9419140 - Two-dimensional condensation for uniaxially strained semiconductor fins (2016-08-16),
7. 9159835 - Two-dimensional condensation for uniaxially strained semiconductor fins (2015-10-13),
8. 8558279 - Non-planar device having uniaxially strained semiconductor body and method of making same (2013-10-15),
9. 8551555 - Biocompatible coatings for medical devices (2013-10-08),
10. 8487348 - Methods and apparatus to reduce layout based strain variations in non-planar transistor structures (2013-07-16),
11. 8299617 - Method and apparatus for forming metal-metal oxide etch stop/barrier for integrated circuit interconnects (2012-10-30),
12. 8269283 - Methods and apparatus to reduce layout based strain variations in non-planar transistor structures (2012-09-18),
13. 8211772 - Two-dimensional condensation for uniaxially strained semiconductor fins (2012-07-03),
14. 7727892 - Method and apparatus for forming metal-metal oxide etch stop/barrier for integrated circuit interconnects (2010-06-01),
15. 7709909 - Method for making a semiconductor device having a high-k gate dielectric (2010-05-04),

Title: Innovations in Resistive Memory: The Work of Markus Kuhn

Introduction: Markus Kuhn, based in Hillsboro, Oregon, has made significant contributions to the field of electronics through his innovative work at Intel Corporation. With a remarkable portfolio of 27 patents, Kuhn's inventions primarily focus on resistive memory technology, a vital aspect of modern computing.

Latest Patents: Among his latest work, Kuhn has developed patents related to resistive memory cells and their precursors. These patents describe methods for creating resistive memory cells that utilize a switching layer precursor containing a controlled distribution of oxygen vacancies. Notably, these inventions aim to enhance the efficiency of memory devices while reducing dependency on oxygen exchange layers. The second electrode in these designs is a conductive material that is engineered not to react with oxygen, further advancing the functionality of resistive memory cells.

Career Highlights: Marcus Kuhn has spent his career at Intel Corporation, where he has been instrumental in advancing memory technology. His expertise and innovative approaches have positioned him as a leading figure in the development of resistive memory solutions, allowing for more efficient data storage and retrieval.

Collaborations: Throughout his career, Kuhn has collaborated with notable colleagues, including Jack T Kavalieros and Robert S Chau. These partnerships have fueled advancements in the research and application of resistive memory technologies, showcasing the power of teamwork in innovation.

Conclusion: Markus Kuhn's dedication to research and development has led to groundbreaking advancements in resistive memory technology. His patents not only reflect his innovative spirit but also contribute significantly to the evolution of electronic devices. With ongoing collaborations and a fervent commitment to invention, Kuhn's work continues to shape the future of memory solutions in computing.

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