The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 11, 2014

Filed:

Jul. 31, 2012
Applicants:

Uday Shah, Portland, OR (US);

Benjamin Chu-kung, Hillsboro, OR (US);

Been-yih Jin, Lake Oswego, OR (US);

Ravi Pillarisetty, Portland, OR (US);

Marko Radosavljevic, Beaverton, OR (US);

Willy Rachmady, Beaverton, OR (US);

Inventors:

Uday Shah, Portland, OR (US);

Benjamin Chu-Kung, Hillsboro, OR (US);

Been-Yih Jin, Lake Oswego, OR (US);

Ravi Pillarisetty, Portland, OR (US);

Marko Radosavljevic, Beaverton, OR (US);

Willy Rachmady, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/335 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/02 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0665 (2013.01); H01L 29/78 (2013.01); H01L 21/02532 (2013.01); H01L 2221/1094 (2013.01); H01L 21/02603 (2013.01); H01L 29/0669 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/02236 (2013.01); H01L 21/76224 (2013.01); H01L 29/0673 (2013.01); H01L 29/66439 (2013.01); H01L 29/775 (2013.01); H01L 29/78696 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01);
Abstract

The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present disclosure relates to forming an isolated nanowire, wherein isolation structure adjacent the nanowire provides a substantially level surface for the formation of microelectronic structures thereon.


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