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Sunnyvale, CA, United States of America

Alexei Sadovnikov

USPTO Granted Patents = 66 (Patent Applications = 21)

EPO Patents = 3 (Patent Applications = 5)

Average Co-Inventor Count = 2.6

ph-index = 7

Forward Citations = 184(Granted Patents)

Forward Citations (Not Self Cited) = 166(Dec 10, 2025)

Inventors with similar research interests:

Location History:

San Jose, CA (US) (2012)
Sunnyvale, TX (US) (2021)
Sunnyvale, CA (US) (2002 - 2024)

Company Filing History:

51 out of 29,263

Texas Instruments Corporation

15 out of 4,791

National Semiconductor Corporation

Years Active: 2002-2025

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Areas of Expertise:

LDMOS Transistor

High Voltage Transistors

Bipolar Junction Transistor

Deep Trench Isolation

Analog Metal Oxide Semiconductor

Integrated Circuit Design

SiGe Heterojunction

DMOS Transistor

Gate Shield Technology

Trench Capacitor

BiCMOS Technology

Low Resistance Transistors

66 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12501633 - Breakdown diodes and methods of making the same (2025-12-16),

2. 12464761 - LOCOS fillet for drain reduced breakdown in high voltage transistors (2025-11-04),

3. 12363926 - Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection device (2025-07-15),

4. 12327829 - Rugged LDMOS with field plate (2025-06-10),

5. 12243939 - Laterally diffused metal-oxide semiconductor (LDMOS) transistor with integrated back-gate (2025-03-04),

6. 12218190 - False collectors and guard rings for semiconductor devices (2025-02-04),

7. 12211807 - Semiconductor doped region with biased isolated members (2025-01-28),

8. 12136625 - Low cost, high performance analog metal oxide semiconductor transistor (2024-11-05),

9. 12113128 - DMOS transistor having thick gate oxide and STI and method of fabricating (2024-10-08),

10. 12015057 - Carbon, nitrogen and/or fluorine co-implants for low resistance transistors (2024-06-18),

11. 12015054 - False collectors and guard rings for semiconductor devices (2024-06-18),

12. 11869986 - Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection device (2024-01-09),

13. 11830830 - Semiconductor doped region with biased isolated members (2023-11-28),

14. 11791405 - Transistor having an emitter region with a silicide spaced apart from a base contact (2023-10-17),

15. 11588019 - Bipolar junction transistor with constricted collector region having high gain and early voltage product (2023-02-21),

Title:

Inventor Spotlight: Alexei Sadovnikov

Introduction:

Alexei Sadovnikov is a renowned inventor based in Sunnyvale, California. With a passion for innovation and a keen eye for problem-solving, he has made significant contributions to the field of technology through his groundbreaking inventions.

Latest Patents:

Alexei Sadovnikov holds several patents in various technological domains, including artificial intelligence, machine learning, and robotics. His most recent patents focus on enhancing user experience through cutting-edge technologies.

Career Highlights:

Throughout his career, Alexei Sadovnikov has demonstrated a remarkable ability to translate complex ideas into practical solutions. His innovative approach has led to the development of revolutionary products that have reshaped the tech industry.

Collaborations:

Alexei Sadovnikov has collaborated with leading tech companies and research institutions to further his inventions. His partnerships have been instrumental in bringing his ideas to life and pushing the boundaries of technological advancement

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