The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
May. 31, 2022
Texas Instruments Incorporated, Dallas, TX (US);
Sheldon Douglas Haynie, Myrtle Beach, SC (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
Brian Goodlin, Plano, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A method forms a semiconductor device with a substrate including semiconductor material formed to include plural corrugation members, each member including a top surface, and a first and second sidewall extending from the top surface to a lower surface. The method forms a contiguous transistor source extending through a first volume of each of the corrugation members and a first lower surface volume and a contiguous transistor drain extending through a second volume of each of the corrugation members and a second lower surface volume. Both source and drain are formed by initially diffusing a dopant in a uniform manner normal to various portions, some non-coplanar, of the source and drain, respectively.