The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 05, 2024
Filed:
Oct. 28, 2021
Texas Instruments Incorporated, Dallas, TX (US);
Pushpa Mahalingam, Richardson, TX (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A microelectronic device including an analog MOS transistor. The analog transistor has a body well having a first conductivity type in a semiconductor material of a substrate of the microelectronic device. The body well extends deeper in the substrate than a field relief dielectric layer at the top surface of the semiconductor material. The analog transistor has a drain well and a source well having a second, opposite, conductivity type in the semiconductor material, both contacting the body well. The drain well and the source well extend deeper in the substrate than the field relief dielectric layer. The analog transistor has a gate on a gate dielectric layer over the body well. The drain well and the source well extend partway under the gate at the top surface of the semiconductor material.