The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2025
Filed:
Dec. 29, 2022
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Alexei Sadovnikov, Sunnyvale, CA (US);
Natalia Lavrovskaya, Sunnyvale, CA (US);
Archana Venugopal, Mountain View, CA (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/25 (2025.01); H10D 8/01 (2025.01); H10D 62/10 (2025.01); H10D 62/60 (2025.01);
U.S. Cl.
CPC ...
H10D 8/25 (2025.01); H10D 8/022 (2025.01); H10D 62/114 (2025.01); H10D 62/60 (2025.01);
Abstract
Breakdown diodes and methods of making the same are described. Such a breakdown diode can be fabricated in a semiconductor substrate and have a junction configured to breakdown under a target reverse bias applied across the junctions. The junction is located below the surface of the substrate by a distance suitable for ameliorating mechanical stress impact to the reverse bias breakdown voltage of the junction. Moreover, the junction is located away from an interface causing noise issues.