Natalia Lavrovskaya

This inventor holds 20 USPTO granted patents and 3 published patent applications, primarily in Transistor Technology. Top assignees: Texas Instruments Corporation, National Semiconductor Corporation. Active years: 2008-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Natalia Lavrovskaya. Retrieved from https://idiyas.com/inventor/natalia-lavrovskaya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20 (Patent Applications = 3)

% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 33(Granted Patents)

Location History:

Synnyvale, CA (US) (2012)
Sunnyvale, CA (US) (2008 - 2023)

Company Filing History:

14 out of 29,888

Texas Instruments Corporation

patents

6 out of 4,791

National Semiconductor Corporation

patents

Years Active: 2008-2026

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Areas of Expertise:

Bipolar Junction Transistor

DMOS Transistor

Non-Volatile Memory

Schottky JFET

BiCMOS Chip

Data Retention

Heating Element

Transistor Fabrication

Capacitor Design

Dopant Implantation

Collector Region

Silicide Emitter

20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12757420 - Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region (2026-10-06),

2. 12501633 - Breakdown diodes and methods of making the same (2025-12-16),

3. 12113128 - DMOS transistor having thick gate oxide and STI and method of fabricating (2024-10-08),

4. 11791405 - Transistor having an emitter region with a silicide spaced apart from a base contact (2023-10-17),

5. 11588019 - Bipolar junction transistor with constricted collector region having high gain and early voltage product (2023-02-21),

6. 11469315 - Bipolar junction transistor with biased structure between base and emitter regions (2022-10-11),

7. 11217665 - Bipolar junction transistor with constricted collector region having high gain and early voltage product (2022-01-04),

8. 11094806 - Fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region (2021-08-17),

9. 11049967 - DMOS transistor having thick gate oxide and STI and method of fabricating (2021-06-29),

10. 10224402 - Method of improving lateral BJT characteristics in BCD technology (2019-03-05),

11. 9831135 - Method of forming a biCMOS semiconductor chip that increases the betas of the bipolar transistors (2017-11-28),

12. 9595480 - Method of forming a BICMOS semiconductor chip that increases the betas of the bipolar transistors (2017-03-14),

13. 8669157 - Non-volatile memory cell having a heating element and a substrate-based control gate (2014-03-11),

14. 8247862 - [object Object] (2012-08-21),

15. 8207559 - Schottky junction-field-effect-transistor (JFET) structures and methods of forming JFET structures (2012-06-26),

Title: Natalia Lavrovskaya: Innovator in Integrated Circuit Technologies

Introduction

Natalia Lavrovskaya, based in Sunnyvale, CA, is a prominent inventor in the field of integrated circuit technologies. With an impressive portfolio of 18 patents, her work has significantly impacted the design and fabrication of advanced semiconductor devices.

Latest Patents

Among her latest innovations, Natalia has developed a DMOS transistor featuring thick gate oxide combined with shallow trench isolation (STI). This invention outlines a method for fabricating an integrated circuit chip, defining crucial regions such as the source and drain contact locations while providing a robust STI structure. Furthermore, she has patent protection for a unique transistor design that includes an emitter region with a silicide layer, spaced apart from the base contact by an unsilicided ring, enhancing the performance and reliability of the circuits.

Career Highlights

Natalia has made substantial contributions to the semiconductor industry through her work at esteemed companies such as Texas Instruments Corporation and National Semiconductor Corporation. Her expertise has driven advancements in circuit design that are widely adopted in electronic devices today.

Collaborations

Throughout her career, Natalia has collaborated with talented professionals in the field, including her coworkers Alexei Sadovnikov and Saurabh Desai. These partnerships have fostered innovative approaches to overcoming technical challenges in integrated circuit technology.

Conclusion

Natalia Lavrovskaya's pioneering work and numerous patents underline her status as a leading inventor in the semiconductor industry. Her contributions are shaping the future of integrated circuit design and continue to inspire innovation in technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

3 patents pending: