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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11791405 B1

PDFFull Text
Date of Patent:
Oct. 17, 2023

Filed:

Jul. 14, 2021

Transistor having an emitter region with a silicide spaced apart from a base contact

Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Alexei Sadovnikov, Sunnyvale, CA (US);

Natalia Lavrovskaya, Sunnyvale, CA (US);

Assignee:

Texas Instruments Incorporated, Dallas, TX (US);

Attorneys:

Andrew R. Ralston

Frank D. Cimino

Primary Examiner:

Khiem D Nguyen

Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/768 (2006.01); H01L 29/45 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 21/311 (2006.01); H01L 29/08 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7393 (2013.01); H01L 21/02164 (2013.01); H01L 21/26513 (2013.01); H01L 21/31105 (2013.01); H01L 21/324 (2013.01); H01L 21/76889 (2013.01); H01L 29/0808 (2013.01); H01L 29/45 (2013.01); H01L 29/4916 (2013.01); H01L 29/66325 (2013.01);
Abstract

An integrated circuit includes a transistor that has an collector region, a base region laterally surrounded by the collector region, and an emitter region laterally surrounded by the base region. A silicide layer on the emitter region is laterally spaced apart from the base region by an unsilicided ring. The emitter region is laterally spaced apart from a base contact region that may be covered by a dielectric layer such as a gate oxide layer.

Find Patent Forward Citations

Sadovnikov, Alexei. (2023). Transistor having an emitter region with a silicide spaced apart from a base contact (U.S. Patent No. 11791405). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11791405

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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