logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9595480 B1

PDFFull Text
Date of Patent:
Mar. 14, 2017

Filed:

Dec. 04, 2014

Method of forming a bicmos semiconductor chip that increases the betas of the bipolar transistors

Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Natalia Lavrovskaya, Sunnyvale, CA (US);

Alexei Sadovnikov, Sunnyvale, CA (US);

Andrew D. Strachan, Santa Clara, CA (US);

Assignee:

TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);

Attorneys:

Tuenlap D. Chan

Charles A. Brill

Frank D. Cimino

Primary Examiner:

Tan N Tran

Int. Cl.
CPC ...
H01L 21/337 (2006.01); H01L 21/8249 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 27/06 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/8249 (2013.01); H01L 27/0623 (2013.01); H01L 27/0635 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/1004 (2013.01); H01L 29/66106 (2013.01); H01L 29/66234 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01);
Abstract

The betas of the bipolar transistors in a BiCMOS semiconductor structure are increased by forming the emitters of the bipolar transistors with two implants: a source-drain implant that forms a first emitter region at the same time that the source and drain regions are formed, and an additional implant that forms a second emitter region at the same time that another region is formed. The additional implant has an implant energy that is greater than the implant energy of the source-drain implant.

Find Patent Forward Citations

Lavrovskaya, Natalia. (2017). Method of forming a bicmos semiconductor chip that increases the betas of the bipolar transistors (U.S. Patent No. 9595480). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9595480

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…