The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Dec. 29, 2017
Texas Instruments Incorporated, Dallas, TX (US);
Alexei Sadovnikov, Sunnyvale, CA (US);
Natalia Lavrovskaya, Sunnyvale, CA (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
A method to fabricate a transistor, the method comprising: implanting dopants in a semiconductor to form a collector region having majority carriers of a first type; implanting dopants with a first dosage and implanting dopants with a second dosage in the collector region to form a base region having majority carriers of a second type, wherein the second dosage is at a lower energy than the first dosage; forming a gate oxide on the base region; forming a gate material on the gate oxide; forming the gate material and the gate oxide to leave uncovered an emitter area of the base region; and implanting dopants in the emitter area to form an emitter region having majority carriers of the first type.