The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Sep. 10, 2020
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Alexei Sadovnikov, Sunnyvale, CA (US);
Natalia Lavrovskaya, Sunnyvale, CA (US);
Guruvayurappan Mathur, Allen, TX (US);
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/735 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/735 (2013.01); H01L 29/42304 (2013.01); H01L 29/6625 (2013.01);
Abstract
In a described example, a bipolar junction transistor includes a substrate. An emitter region, a base region, and a collector region are each formed in the substrate. A gate-type structure is formed on the substrate between the base region and the emitter region. A contact is coupled to the gate-type structure, and the contact is adapted to be coupled to a source of DC voltage.