Alexander V Suvorov

This inventor holds 41 USPTO granted patents and 3 published patent applications, plus 1 CIPO patent and 11 EPO patents, primarily in Power Semiconductor Devices. Top assignees: Cree Gmbh, Wolfspeed, Inc., Cree Research Inc.. Active years: 1997-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Alexander V Suvorov. Retrieved from https://idiyas.com/inventor/alexander-v-suvorov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 41 (Patent Applications = 3)

% Patents Active = 100.0

CIPO Patents = 1

EPO Patents = 11 (Patent Applications = 11)

Average Co-Inventor Count = 2.3

ph-index = 11

Forward Citations = 597(Granted Patents)

Company Filing History:

Years Active: 1997-2025

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Areas of Expertise:

Power Semiconductor Devices

Silicon Carbide

High-Electron Mobility Transistors

Ion Implantation

MOSFET Transistors

Schottky Diodes

Epitaxial Deposition

LED Fabrication

Implanted Regions

Channel Layers

Backside Ohmic Contacts

41 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12477770 - Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same (2025-11-18),

2. 11862719 - Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same (2024-01-02),

3. 11791378 - Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods (2023-10-17),

4. 11164967 - Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices (2021-11-02),

5. 11075264 - Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods (2021-07-27),

6. 10892356 - Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same (2021-01-12),

7. 10867797 - Methods and apparatuses related to shaping wafers fabricated by ion implantation (2020-12-15),

8. 10840334 - Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same (2020-11-17),

9. 10541306 - Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device (2020-01-21),

10. 10424660 - Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices (2019-09-24),

11. 10217824 - Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling (2019-02-26),

12. 10192980 - Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same (2019-01-29),

13. 10103230 - Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions (2018-10-16),

14. 9984881 - Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices (2018-05-29),

15. 9929284 - Power schottky diodes having local current spreading layers and methods of forming such devices (2018-03-27),

Title: The Innovations of Alexander V. Suvorov

Introduction

Alexander V. Suvorov, a prominent inventor based in Durham, NC, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 40 patents, Suvorov is recognized for his groundbreaking inventions that leverage cutting-edge materials and methods to enhance the performance of electronic devices.

Latest Patents

Among his latest patents, Suvorov has developed group III-nitride high-electron mobility transistors with buried p-type layers. This innovative apparatus includes a substrate, a group III-nitride buffer layer on the substrate, and a group III-nitride barrier layer that features a higher bandgap than the buffer layer. The arrangement also incorporates a source, gate, and drain that are electrically coupled to the barrier layer, along with a p-region situated on or below the barrier layer.

Another notable patent involves superjunction power semiconductor devices formed via ion implantation channeling techniques. These semiconductor devices include a silicon carbide drift region with a distinctive superjunction structure that integrates a p-n junction at a specific angle to optimize performance, ensuring effective conductivity and efficiency in power applications.

Career Highlights

Throughout his illustrious career, Suvorov has worked with reputable companies such as Cree GmbH and Wolfspeed, Inc. His expertise in semiconductor materials and device fabrication has been instrumental in driving advancements in the industry, particularly in the development of power-efficient semiconductor technologies.

Collaborations

Suvorov has collaborated with esteemed professionals in his field, including David Beardsley Slater, Jr. and John Adam Edmond. These partnerships have allowed him to strengthen his research initiatives and accelerate innovation processes within the semiconductor landscape.

Conclusion

With his extensive number of patents and innovative inventions, Alexander V. Suvorov emerges as a leading figure in semiconductor technology. His work not only pushes the boundaries of what is possible in electronic device performance but also lays the groundwork for future advancements in the field. As he continues to innovate, the impact of his contributions will undoubtedly resonate throughout the industry for years to come.

Profile summary based on public USPTO records.