Average Co-Inventor Count = 2.31
ph-index = 11
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. Cree Gmbh (37 from 2,307 patents)
2. Wolfspeed, Inc. (3 from 212 patents)
3. Cree Research Inc. (1 from 50 patents)
41 patents:
1. 12477770 - Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
2. 11862719 - Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
3. 11791378 - Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods
4. 11164967 - Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices
5. 11075264 - Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods
6. 10892356 - Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same
7. 10867797 - Methods and apparatuses related to shaping wafers fabricated by ion implantation
8. 10840334 - Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
9. 10541306 - Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor device
10. 10424660 - Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices
11. 10217824 - Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling
12. 10192980 - Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same
13. 10103230 - Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions
14. 9984881 - Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
15. 9929284 - Power schottky diodes having local current spreading layers and methods of forming such devices