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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11164967 B1

PDFFull Text
Date of Patent:
Nov. 02, 2021

Filed:

Aug. 12, 2019

Power silicon carbide based mosfet transistors with improved short circuit capabilities and methods of making such devices

Applicant:

Cree, Inc., Durham, NC (US);

Inventors:

Qingchun Zhang, Cary, NC (US);

Alexander V. Suvorov, Durham, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Long Pham

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 21/265 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7802 (2013.01); H01L 21/047 (2013.01); H01L 21/26513 (2013.01); H01L 29/0646 (2013.01); H01L 29/0696 (2013.01); H01L 29/086 (2013.01); H01L 29/105 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/7828 (2013.01);
Abstract

A power MOSFET includes a silicon carbide drift region having a first conductivity type, first and second well regions located in upper portions of the silicon carbide drift region that are doped with second conductivity dopants, and a channel region in a side portion of the first well region, an upper portion of the channel region having the first conductivity type, wherein a depth of the first well region is at least 1.5 microns and the depth of the first well region exceeds a distance between the first and second well regions.

Find Patent Forward Citations

Zhang, Qingchun. (2021). Power silicon carbide based mosfet transistors with improved short circuit capabilities and methods of making such devices (U.S. Patent No. 11164967). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11164967

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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