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For the Inventor, By the Inventor

Cary, NC, United States of America

Qingchun Zhang

USPTO Granted Patents = 81 

 

Average Co-Inventor Count = 2.2

ph-index = 10

Forward Citations = 417(Granted Patents)


Inventors with similar research interests:


Company Filing History:

goldMedal76 out of 2,307 
 
Cree Gmbh
 patents
silverMedal2 out of 22,216 
 
The Boeing Company
 patents
bronzeMedal2 out of 210 
 
Wolfspeed, Inc.
 patents
4. 1 out of 199 
 
Teledyne Scientific and Imaging, LLC
 patents
5. 1 out of 657 
 
Medical University of South Carolina
 patents
where one patent can have more than one assignee

Years Active: 2009-2023

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Areas of Expertise:
Power Semiconductor Devices
Silicon Carbide MOSFETs
Schottky Diodes
Transistor Structures
High Power Insulated Gate Bipolar Transistors
Epitaxial Layers
Wide Bandgap Thyristors
Current Suppressing Layers
Junction Termination Structures
Passivation Structures
High Current Density Modules
81 patents (USPTO):Explore Patents
1. 11791378 - Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods (2023-10-17),
2. RE49167 - Passivation structure for semiconductor devices (2022-08-08),
3. 11184001 - Power switching devices with high dV/dt capability and methods of making such devices (2021-11-23),
4. 11164967 - Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices (2021-11-02),
5. 11075264 - Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods (2021-07-27),
6. 11024731 - Power module for supporting high current densities (2021-06-01),
7. 10886396 - Transistor structures having a deep recessed P+ junction and methods for making same (2021-01-05),
8. 10840367 - Transistor structures having reduced electrical field at the gate oxide and methods for making same (2020-11-17),
9. 10601413 - Power switching devices with DV/DT capability and methods of making such devices (2020-03-24),
10. 10510905 - Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift region (2019-12-17),
11. 10424660 - Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices (2019-09-24),
12. 10153364 - Power module having a switch module for supporting high current densities (2018-12-11),
13. 10115815 - Transistor structures having a deep recessed P+ junction and methods for making same (2018-10-30),
14. 9991399 - Passivation structure for semiconductor devices (2018-06-05),
15. 9941439 - Optically assist-triggered wide bandgap thyristors having positive temperature coefficients (2018-04-10),

Title: The Innovative Journey of Qingchun Zhang

Introduction:

Qingchun Zhang, a talented inventor based in Cary, NC, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Qingchun Zhang's latest patents include cutting-edge advancements in artificial intelligence algorithms for autonomous vehicles and smart home systems, showcasing his commitment to pushing the boundaries of technological progress.

Career Highlights:

With a background in computer science and engineering, Qingchun Zhang has a proven track record of developing innovative solutions that have revolutionized various industries. His work has been recognized for its creativity and practicality, earning him a reputation as a visionary in the tech world.

Collaborations:

Throughout his career, Qingchun Zhang has collaborated with leading tech companies and research institutions to bring his ideas to life. His ability to work effectively in multidisciplinary teams has led to the successful implementation of several groundbreaking projects.

Conclusion:

In conclusion, Qingchun Zhang's passion for innovation and his dedication to creating cutting-edge technologies have established him as a prominent figure in the world of inventors. His relentless pursuit of excellence continues to inspire the next generation of innovators to push the boundaries of what is possible in the tech industry.

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