The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2020
Filed:
Nov. 07, 2016
Applicant:
Cree, Inc., Durham, NC (US);
Inventors:
Qingchun Zhang, Cary, NC (US);
Brett Hull, Raleigh, NC (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/749 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7802 (2013.01); H01L 29/0619 (2013.01); H01L 29/0623 (2013.01); H01L 29/0688 (2013.01); H01L 29/0847 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/66068 (2013.01); H01L 29/66333 (2013.01); H01L 29/66378 (2013.01); H01L 29/66666 (2013.01); H01L 29/66712 (2013.01); H01L 29/7395 (2013.01); H01L 29/749 (2013.01); H01L 29/7827 (2013.01); H01L 29/7828 (2013.01); H01L 29/0878 (2013.01);
Abstract
A transistor device having reduced electrical field at the gate oxide interface is disclosed. In one embodiment, the transistor device comprises a gate, a source, and a drain, wherein the gate is at least partially in contact with a gate oxide. The transistor device has a P+ region within a JFET region of the transistor device in order to reduce an electrical field on the gate oxide.