Cree Gmbh

The Boeing Company

Wolfspeed, Inc.

Medical University of South Carolina

Teledyne Scientific and Imaging, LLC

Qingchun Zhang

Anant Kumar Agarwal

Sei-Hyung Ryu

Jason Patrick Henning

John Williams Palmour

Scott Thomas Allen

Brett Hull

Charlotte Jonas

Alexander V Suvorov

Edward Robert Van Brunt

Mrinal Kanti Das

Daniel Jenner Lichtenwalner

Alexander Viktorovich Bolotnikov

Vipindas Pala

Van Mieczkowski

Tangali S Sudarshan

Adam Barkley

Robert J Callanan

James Theodore Richmond

Jonathan Young

Matthew Donofrio

Saptharishi Sriram

Lin Cheng

Joseph John Sumakeris

Michael O'Loughlin

Sarah Kay Haney

Sarit Dhar

Doyle Craig Capell

Craig Capell

Jennifer Duc

Albert Burk

John M Clayton, Jr

Mercedes P Gomez

Emil M Hanna

Wen-Ben Luo

Hsueh-Rong Chang

Brett Adam Hull

Semiconductor devices include a silicon carbide drift region having an upper portion and a lower portion. A first contact is on the upper portion of the drift region and a second contact is on the lower portion of the drift region. The drift region includes a superjunction structure that includes a p-n junction that is formed at an angle of between 10&#xb0; and 30&#xb0; from a plane that is normal to a top surface of the drift region. The p-n junction extends within +/&#x2212;1.5&#xb0; of a crystallographic axis of the silicon carbide material forming the drift region.

Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methods

A Schottky diode is disclosed that includes a silicon carbide substrate, a silicon carbide drift layer, a Schottky contact, and a passivation structure. The silicon carbide drift layer provides an active region and an edge termination region about the active region. The Schottky contact has sides and a top extending between the two sides and includes a Schottky layer over the active region and an anode contact over the Schottky layer. The passivation structure covers the edge termination region, the sides of the Schottky contact, and at least a portion of the top of the Schottky contact. The passivation structure includes a first silicon nitride layer, a silicon dioxide layer over the first silicon nitride layer, and a second silicon nitride layer over the silicon dioxide layer.

Passivation structure for semiconductor devices

Power switching devices include a semiconductor layer structure that has an active region and an inactive region. The active region includes a plurality of unit cells and the inactive region includes a field insulating layer on the semiconductor layer structure and a gate bond pad on the field insulating layer opposite the semiconductor layer structure. A gate insulating pattern is provided on the semiconductor layer structure between the active region and the field insulating layer, and at least one source/drain contact is provided on the semiconductor layer structure between the gate insulating pattern and the field insulating layer.

Power switching devices with high dV/dt capability and methods of making such devices

A power MOSFET includes a silicon carbide drift region having a first conductivity type, first and second well regions located in upper portions of the silicon carbide drift region that are doped with second conductivity dopants, and a channel region in a side portion of the first well region, an upper portion of the channel region having the first conductivity type, wherein a depth of the first well region is at least 1.5 microns and the depth of the first well region exceeds a distance between the first and second well regions.

Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devices

Super junction power semiconductor devices formed via ion implantation channeling techniques and related methods

A power module is disclosed that includes a housing with an interior chamber wherein multiple switch modules are mounted within the interior chamber. The switch modules comprise multiple transistors and diodes that are interconnected to facilitate switching power to a load. In one embodiment, at least one of the switch modules supports a current density of at least 10 amperes per cm.

Power module for supporting high current densities

A transistor device having a deep recessed P+ junction is disclosed. The transistor device may comprise a gate and a source on an upper surface of the transistor device, and may include at least one doped well region, wherein the at least one doped well region has a first conductivity type that is different from a conductivity type of a source region within the transistor device and the at least one doped well region is recessed from the upper surface of the transistor device by a depth. The deep recessed P+ junction may be a deep recessed P+ implanted junction within a source contact area. The deep recessed P+ junction may be deeper than a termination structure in the transistor device. The transistor device may be a Silicon Carbide (SiC) MOSFET device.

Transistor structures having a deep recessed P+ junction and methods for making same

A transistor device having reduced electrical field at the gate oxide interface is disclosed. In one embodiment, the transistor device comprises a gate, a source, and a drain, wherein the gate is at least partially in contact with a gate oxide. The transistor device has a P+ region within a JFET region of the transistor device in order to reduce an electrical field on the gate oxide.

Transistor structures having reduced electrical field at the gate oxide and methods for making same

Power switching devices with DV/DT capability and methods of making such devices

A Schottky diode includes a drift region, a channel in an upper portion of the drift region, and first and second adjacent blocking junctions in the upper portion of the drift region that define the channel therebetween. The drift region and channel are doped with dopants having a first conductivity type, and the first and second blocking junctions doped with dopants having a second conductivity type that is opposite the first conductivity type. The blocking junctions extend at least one micron into the upper portion of the drift region and are spaced apart from each other by less than 3.0 microns.

Power Schottky diodes having closely-spaced deep blocking junctions in a heavily-doped drift region

Power module having a switch module for supporting high current densities

A transistor device having a deep recessed P+ junction is disclosed. The transistor device may comprise a gate and a source on an upper surface of the transistor device, and may include at least one doped well region, wherein the at least one doped well region has a first conductivity type that is different from a conductivity type of a source region within the transistor device and the at least one doped well region is recessed from the upper surface of the transistor device by a depth. The deep recessed P+ junction may be a deep recessed P+ implanted junction within a source contact area. The deep recessed P+ junction may be deeper than a termination structure in the transistor device. The transistor device may be a Silicon Carbide (SIC) MOSFET device.

A thyristor includes a first conductivity type semiconductor layer, a first conductivity type carrier injection layer on the semiconductor layer, a second conductivity type drift layer on the carrier injection layer, a first conductivity type base layer on the drift layer, and a second conductivity type anode region on the base layer. The thickness and doping concentration of the carrier injection layer are selected to reduce minority carrier injection by the carrier injection layer in response to an increase in operating temperature of the thyristor. A cross-over current density at which the thyristor shifts from a negative temperature coefficient of forward voltage to a positive temperature coefficient of forward voltage is thereby reduced.

Optically assist-triggered wide bandgap thyristors having positive temperature coefficients

Growing community of inventors

Cary, NC, United States of America

Qingchun Zhang