The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

May. 31, 2016
Applicant:

Cree, Inc., Durham, NC (US);

Inventors:

Edward Robert Van Brunt, Raleigh, NC (US);

Alexander V. Suvorov, Durham, NC (US);

Vipindas Pala, Morrisville, NC (US);

Daniel J. Lichtenwalner, Raleigh, NC (US);

Qingchun Zhang, Cary, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/04 (2006.01); H01L 29/66 (2006.01); H01L 29/872 (2006.01); H01L 21/04 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 21/047 (2013.01); H01L 29/045 (2013.01); H01L 29/0619 (2013.01); H01L 29/1608 (2013.01); H01L 29/6606 (2013.01); H01L 29/7802 (2013.01); H01L 29/872 (2013.01); H01L 29/0692 (2013.01); H01L 29/1095 (2013.01);
Abstract

Semiconductor devices include a silicon carbide drift region having an upper portion and a lower portion. A first contact is on the upper portion of the drift region and a second contact is on the lower portion of the drift region. The drift region includes a superjunction structure that includes a p-n junction that is formed at an angle of between 10° and 30° from a plane that is normal to a top surface of the drift region. The p-n junction extends within +/−1.5° of a crystallographic axis of the silicon carbide material forming the drift region.


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