Morrisville, NC, United States of America

Vipindas Pala

This inventor holds 50 USPTO granted patents and 6 published patent applications and 8 EPO patents, primarily in Power Semiconductor Devices. Top assignees: Cree Gmbh, Monolithic Power Systems, Inc., Alpha and Omega Semiconductor (Cayman) Ltd.. Active years: 2015-2026.

USPTO Granted Patents = 50 

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.5

ph-index = 6

Forward Citations = 113(Granted Patents)


Location History:

  • Durham, NC (US) (2016 - 2018)
  • Morrisville, NC (US) (2015 - 2023)
  • San Jose, CA (US) (2020 - 2024)

Company Filing History:


Years Active: 2015-2026

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Areas of Expertise:
Power Transistor
LDMOS
Silicon Carbide
Superjunction
Field Effect Transistor
Ion Implantation
High Voltage
Mesa Structure
Trench Device
Bypass Diode
Wave-Shaped Channel
Buried Junction
50 patents (USPTO):Explore Patents

Title: Innovations of Vipindas Pala in Wide Bandgap Device Technology

Introduction

Vipindas Pala, based in Morrisville, NC, has made significant contributions to the field of wide bandgap devices through his innovative approaches and extensive research. With an impressive portfolio of 43 patents, he stands out in the realm of semiconductor technology and manufacturing processes.

Latest Patents

Among Vipindas Pala's latest advancements is the patent titled "Thin wafer process for improved crystal utilization of wide bandgap devices." This method includes a carefully crafted procedure for fabricating wide bandgap devices by using a thin native substrate. An epitaxial layer is grown on this substrate, which is subsequently supported by a handle substrate during the fabrication process, allowing for the creation of devices using a low-temperature methodology. The handle substrate is detached once the fabrication is complete.

Another notable patent is the "Single sided channel mesa power junction field effect transistor." This innovation covers junction field effect transistors (JFETs) that feature a vertical channel region within a mesa. This device is designed with a channel control region located on one side of the mesa and base regions that extend through to make contact with the vertical channel. The design enables improved functionality in control and operation.

Career Highlights

Vipindas Pala has held significant positions at reputable companies, including Cree GmbH and Monolithic Power Systems, Inc. His contributions within these organizations have led to notable advancements in the semiconductor industry, particularly in the development of efficient wide bandgap devices.

Collaborations

Throughout his career, Vipindas has had the opportunity to collaborate with esteemed colleagues such as Lin Cheng and Anant Kumar Agarwal. These collaborations have spurred innovative research and resulted in groundbreaking patents that contribute to advancements in the industry.

Conclusion

Vipindas Pala's career is marked by a passion for innovation and a commitment to enhancing the capabilities of semiconductor technology. With his extensive patent portfolio and collaborations, he continues to influence the field of wide bandgap devices significantly, paving the way for new technological advancements.

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