The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 13, 2026
Filed:
May. 23, 2022
Applicant:
Monolithic Power Systems, Inc., Kirkland, WA (US);
Inventors:
Sudarsan Uppili, Portland, OR (US);
Vipindas Pala, San Jose, CA (US);
Carl Johnson, Fairview, TX (US);
Chan Wu, Suzhou, CN;
John Trepl, II, Dana Point, CA (US);
Assignee:
Monolithic Power Systems, Inc., Kirkland, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/268 (2006.01); H01L 21/304 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/268 (2013.01); H01L 21/304 (2013.01); H01L 21/3065 (2013.01);
Abstract
A semiconductor wafer processing method, having: ablating a back side of a semiconductor wafer with a laser ablation process; and etching the back side of the semiconductor wafer with an etching process; wherein the laser ablation process forms a pattern in the back side of the semiconductor wafer; wherein the etching process preserves the pattern in the back side of the semiconductor wafer.