The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 23, 2026

Filed:

Aug. 08, 2023
Applicant:

Monolithic Power Systems, Inc., Kirkland, WA (US);

Inventors:

Vipindas Pala, San Jose, CA (US);

Sauvik Chowdhury, San Jose, CA (US);

Assignee:

Monolithic Power Systems, Inc., Kirkland, WA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/00 (2025.01); H10D 30/01 (2025.01); H10D 30/60 (2025.01); H10D 30/66 (2025.01); H10D 30/83 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 84/141 (2025.01); H10D 30/0291 (2025.01); H10D 30/0297 (2025.01); H10D 30/0512 (2025.01); H10D 30/615 (2025.01); H10D 30/668 (2025.01); H10D 30/83 (2025.01); H10D 30/831 (2025.01); H10D 62/107 (2025.01); H10D 62/127 (2025.01);
Abstract

A semiconductor device includes a first source region, a first sidewall body region, a gate region, a second source region and a link region formed in a substrate of a first conductivity type. The first source region and the second source region may be of the first conductivity type while the first sidewall body region and the link region may be of a second conductivity type opposite to the first conductivity type. The link region and the gate region are respectively disposed at a first side and a second side of the first source region. The first sidewall body region may be disposed below or underneath the first source region.


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