The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 09, 2024
Filed:
Oct. 26, 2020
Wolfspeed, Inc., Durham, NC (US);
Vipindas Pala, San Jose, CA (US);
Anant Kumar Agarwal, Chapel Hill, NC (US);
Lin Cheng, Chapel Hill, NC (US);
Daniel Jenner Lichtenwalner, Raleigh, NC (US);
John Williams Palmour, Cary, NC (US);
Wolfspeed, Inc., Durham, NC (US);
Abstract
A power metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a drift layer over the substrate, and a spreading layer over the drift layer. The spreading layer includes a pair of junction implants separated by a junction gate field effect (JFET) region. A gate oxide layer is on top of the spreading layer. The gate contact is on top of the gate oxide layer. Each one of the source contacts are on a portion of the spreading layer separate from the gate oxide layer and the gate contact. The drain contact is on the surface of the substrate opposite the drift layer.