The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2025
Filed:
Mar. 21, 2022
Applicant:
Monolithic Power Systems, Inc., San Jose, CA (US);
Inventors:
Vipindas Pala, San Jose, CA (US);
Sudarsan Uppili, Portland, OR (US);
Assignee:
Monolithic Power Systems, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2005.12); H10D 12/01 (2024.12); H10D 30/01 (2024.12); H10D 62/832 (2024.12);
U.S. Cl.
CPC ...
H01L 21/02378 (2012.12); H01L 21/02529 (2012.12); H10D 12/031 (2024.12); H10D 62/8325 (2024.12); H10D 30/025 (2024.12);
Abstract
A method of fabricating a wide bandgap device includes providing a thin native substrate. An epitaxial layer is grown on a surface of the native substrate. After growing the epitaxial layer, a handle substrate is attached to the opposite surface of the native substrate by way of an interface layer. With the handle substrate providing mechanical support, wide bandgap devices are fabricated in the epitaxial layer using a low-temperature fabrication process. The handle substrate is detached from the native substrate after fabrication of the wide bandgap devices.