Semiconductor device with integrated junction field effect transistor and associated manufacturing method

Abstract

A method for manufacturing a semiconductor device includes preparing a substrate of a first conductivity type having a drain region, forming a first source region and a second source region of the first conductivity type in the substrate separated from each other, and forming a gate trench of a gate region disposed closely next to or in adjoining neighbor to the first source region. The method may further include forming a first sidewall body region of a second conductivity type to separate the first source region from the second source region, forming a link region of the second conductivity type such that the link region and the gate trench are disposed spatially opposite to each other, forming a gate insulation layer to coat and line sidewalls and a bottom of the gate trench, and using a gate conductive material to fill the gate trench.