The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2018
Filed:
Dec. 28, 2012
Cree, Inc., Durham, NC (US);
Qingchun Zhang, Cary, NC (US);
Brett Hull, Raleigh, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A transistor device having a deep recessed P+ junction is disclosed. The transistor device may comprise a gate and a source on an upper surface of the transistor device, and may include at least one doped well region, wherein the at least one doped well region has a first conductivity type that is different from a conductivity type of a source region within the transistor device and the at least one doped well region is recessed from the upper surface of the transistor device by a depth. The deep recessed P+ junction may be a deep recessed P+ implanted junction within a source contact area. The deep recessed P+ junction may be deeper than a termination structure in the transistor device. The transistor device may be a Silicon Carbide (SIC) MOSFET device.