The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 16, 2018
Filed:
Oct. 31, 2016
Applicant:
Cree, Inc., Durham, NC (US);
Inventors:
Edward Robert Van Brunt, Morrisville, NC (US);
Alexander V. Suvorov, Durham, NC (US);
Vipindas Pala, Durham, NC (US);
Lin Cheng, Chapel Hill, NC (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/324 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 21/04 (2006.01); H01L 29/872 (2006.01); H01L 29/861 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/046 (2013.01); H01L 21/047 (2013.01); H01L 21/26506 (2013.01); H01L 21/26586 (2013.01); H01L 21/324 (2013.01); H01L 29/0619 (2013.01); H01L 29/0688 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 29/66712 (2013.01); H01L 29/7802 (2013.01); H01L 29/7828 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01); H05K 999/99 (2013.01);
Abstract
A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate, and a buried junction structure in the silicon carbide drift layer. The buried junction structure has a second conductivity type opposite the first conductivity type and has a junction depth that is greater than about one micron.