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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10103230 B1

PDFFull Text
Date of Patent:
Oct. 16, 2018

Filed:

Oct. 31, 2016

Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions

Applicant:

Cree, Inc., Durham, NC (US);

Inventors:

Edward Robert Van Brunt, Morrisville, NC (US);

Alexander V. Suvorov, Durham, NC (US);

Vipindas Pala, Durham, NC (US);

Lin Cheng, Chapel Hill, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Julio J Maldonado

Assistant Examiner:

Farun Lu

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/324 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 21/04 (2006.01); H01L 29/872 (2006.01); H01L 29/861 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/046 (2013.01); H01L 21/047 (2013.01); H01L 21/26506 (2013.01); H01L 21/26586 (2013.01); H01L 21/324 (2013.01); H01L 29/0619 (2013.01); H01L 29/0688 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 29/66712 (2013.01); H01L 29/7802 (2013.01); H01L 29/7828 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01); H05K 999/99 (2013.01);
Abstract

A semiconductor device structure according to some embodiments includes a silicon carbide substrate having a first conductivity type, a silicon carbide drift layer having the first conductivity type on the silicon carbide substrate and having an upper surface opposite the silicon carbide substrate, and a buried junction structure in the silicon carbide drift layer. The buried junction structure has a second conductivity type opposite the first conductivity type and has a junction depth that is greater than about one micron.

Find Patent Forward Citations

Van Brunt, Edward. (2018). Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctions (U.S. Patent No. 10103230). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10103230

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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