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Durham, NC, United States of America

Cree Research Inc.

USPTO Granted Patents = 50

Forward Citations = 8,705

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32 inventors (with patents filed for the assignee):

John Williams Palmour (18 out of 84 patents)

John Adam Edmond (17 out of 181 patents)

Calvin H Carter, Jr (9 out of 29 patents)

4. Ranbir Singh (9 out of 20 patents)

5. Hua-shuang Kong (9 out of 38 patents)

6. Gary E Bulman (4 out of 4 patents)

7. Vladimir A Dmitriev (4 out of 4 patents)

8. Gerald H Negley (3 out of 266 patents)

9. Valeri Fedorovich Tsvetkov (2 out of 39 patents)

10. Robert C Glass (2 out of 11 patents)

11. Douglas G Waltz (2 out of 3 patents)

12. Thomas G Coleman (2 out of 2 patents)

13. C Eric Hunter (2 out of 2 patents)

14. Sei-Hyung Ryu (1 out of 114 patents)

15. Alexander V Suvorov (1 out of 41 patents)

Core Competencies:

Silicon Carbide

Light Emitting Diodes

Bipolar Transistor

Power MOSFET

High Efficiency

Field Effect Transistor

Gallium Nitride

Chemical Vapor Deposition

Ultraviolet Radiation Detector

Substrate Surfaces

Latch-Up Free

High Frequency

50 patents: Sort by Forward Citations

1. 6281521 - Silicon carbide horizontal channel buffered gate semiconductor devices (2001-08-28),

2. 6218254 - Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices (2001-04-17),

3. 6121633 - Latch-up free power MOS-bipolar transistor (2000-09-18),

4. 612163 - Latch-up free power MOS-bipolar transistor (2000-09-19),

5. 6107142 - Self-aligned methods of fabricating silicon carbide power devices by (2000-08-22),

6. 6025289 - Colorless silicon carbide crystals (2000-02-15),

7. 6011279 - Silicon carbide field controlled bipolar switch (2000-01-04),

8. 5972801 - Process for reducing defects in oxide layers on silicon carbide (1999-10-26),

9. 5969378 - Latch-up free power UMOS-bipolar transistor (1999-10-19),

10. 5923946 - Recovery of surface-ready silicon carbide substrates (1999-07-13),

11. 5912477 - High efficiency light emitting diodes (1999-06-15),

12. 5838706 - Low-strain laser structures with group III nitride active layers (1998-11-17),

13. 5831288 - Silicon carbide metal-insulator semiconductor field effect transistor (1998-11-03),

14. 5812105 - Led dot matrix drive method and apparatus (1998-09-22),

15. 5776837 - Method of obtaining high quality silicon dioxide passivation on silicon (1998-07-07),

Company Overview

Cree Research Inc., based in Durham, NC, specializes in advanced silicon carbide technology, focusing on the development and manufacturing of high-performance semiconductor solutions. The company is renowned for its innovations in light emitting diodes (LEDs), bipolar transistors, and power MOSFETs, which are pivotal in enhancing energy efficiency across various applications. Additionally, Cree is a leader in gallium nitride technology and chemical vapor deposition processes, driving advancements in power electronics and optoelectronics.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

50 Patents

#23 in Durham, NC

#170 in North Carolina

#7,011 in US

#14,024 in the World

Durham, NC, United States of America

Cree Research Inc.

Forward Citations = 8,705

32 inventors:

John Williams Palmour (18 out of 84 patents)

John Adam Edmond (17 out of 181 patents)

Calvin H Carter, Jr (9 out of 29 patents)

4. Ranbir Singh (9 out of 20 patents)

5. Hua-shuang Kong (9 out of 38 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Cree Research Inc.. Retrieved from https://idiyas.com/company/cree-research

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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