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Durham, NC, United States of America

Cree Research Inc.

USPTO Granted Patents = 50

Forward Citations = 8,705

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32 inventors (with patents filed for the assignee):

John Williams Palmour (18 out of 84 patents)

John Adam Edmond (17 out of 181 patents)

Calvin H Carter, Jr (9 out of 29 patents)

4. Ranbir Singh (9 out of 20 patents)

5. Hua-shuang Kong (9 out of 38 patents)

6. Gary E Bulman (4 out of 4 patents)

7. Vladimir A Dmitriev (4 out of 4 patents)

8. Gerald H Negley (3 out of 266 patents)

9. Valeri Fedorovich Tsvetkov (2 out of 39 patents)

10. Robert C Glass (2 out of 11 patents)

11. Douglas G Waltz (2 out of 3 patents)

12. Thomas G Coleman (2 out of 2 patents)

13. C Eric Hunter (2 out of 2 patents)

14. Sei-Hyung Ryu (1 out of 113 patents)

15. Alexander V Suvorov (1 out of 41 patents)

Core Competencies:

Silicon Carbide

Light Emitting Diodes

Bipolar Transistor

Power MOSFET

High Efficiency

Field Effect Transistor

Gallium Nitride

Chemical Vapor Deposition

Ultraviolet Radiation Detector

Substrate Surfaces

Latch-Up Free

High Frequency

50 patents: Sort by Forward Citations

1. 6281521 - Silicon carbide horizontal channel buffered gate semiconductor devices (2001-08-28),

2. 6218254 - Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices (2001-04-17),

3. 6121633 - Latch-up free power MOS-bipolar transistor (2000-09-18),

4. 612163 - Latch-up free power MOS-bipolar transistor (2000-09-19),

5. 6107142 - Self-aligned methods of fabricating silicon carbide power devices by (2000-08-22),

6. 6025289 - Colorless silicon carbide crystals (2000-02-15),

7. 6011279 - Silicon carbide field controlled bipolar switch (2000-01-04),

8. 5972801 - Process for reducing defects in oxide layers on silicon carbide (1999-10-26),

9. 5969378 - Latch-up free power UMOS-bipolar transistor (1999-10-19),

10. 5923946 - Recovery of surface-ready silicon carbide substrates (1999-07-13),

11. 5912477 - High efficiency light emitting diodes (1999-06-15),

12. 5838706 - Low-strain laser structures with group III nitride active layers (1998-11-17),

13. 5831288 - Silicon carbide metal-insulator semiconductor field effect transistor (1998-11-03),

14. 5812105 - Led dot matrix drive method and apparatus (1998-09-22),

15. 5776837 - Method of obtaining high quality silicon dioxide passivation on silicon (1998-07-07),

Cree Research Inc. is a leading innovator and manufacturer of semiconductors and lighting products. With a focus on silicon carbide (SiC) and gallium nitride (GaN) devices, Cree is driving advancements in various industries, including power and radio frequency (RF) applications, lighting, and electric vehicles. Their cutting-edge technologies are renowned for delivering higher performance, energy efficiency, and reliability. Cree’s commitment to sustainability is reflected in its dedication to reducing global energy consumption and environmental impact through its innovative products.

Profile summary based on public USPTO records.

Company Badge

USPTO Data Jan 1 1976 - Sep 29 2026

Cree Research Inc.

50 Patents

#23 in Durham, NC

#170 in North Carolina

#6,994 in US

#13,981 in the World

Durham, NC, United States of America

Cree Research Inc.

Forward Citations = 8,705

32 inventors:

John Williams Palmour (18 out of 84 patents)

John Adam Edmond (17 out of 181 patents)

Calvin H Carter, Jr (9 out of 29 patents)

4. Ranbir Singh (9 out of 20 patents)

5. Hua-shuang Kong (9 out of 38 patents)

Please report any incorrect information to [email protected]

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