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Durham, NC, United States of America

Cree Research Inc.

USPTO Granted Patents = 50

Trademarks = 2

Forward Citations = 8,660

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32 inventors (with patents filed for the assignee):

John Williams Palmour (18 out of 84 patents)

John Adam Edmond (17 out of 180 patents)

Calvin H Carter, Jr (9 out of 29 patents)

4. Ranbir Singh (9 out of 20 patents)

5. Hua-shuang Kong (9 out of 38 patents)

6. Gary E Bulman (4 out of 4 patents)

7. Vladimir A Dmitriev (4 out of 4 patents)

8. Gerald H Negley (3 out of 263 patents)

9. Valeri Fedorovich Tsvetkov (2 out of 39 patents)

10. Robert C Glass (2 out of 11 patents)

11. Douglas G Waltz (2 out of 3 patents)

12. Thomas G Coleman (2 out of 2 patents)

13. C Eric Hunter (2 out of 2 patents)

14. Sei-Hyung Ryu (1 out of 107 patents)

15. Alexander V Suvorov (1 out of 41 patents)

Core Competencies:

Silicon Carbide

Light Emitting Diodes

Power MOSFET

Bipolar Junction Transistor

Field Effect Transistor

Gallium Nitride

High Efficiency LEDs

Ultraviolet Radiation Detector

Chemical Vapor Deposition

High Power Transistors

Substrate Preparation

Laser Structures

50 patents: Sort by Forward Citations

1. 6281521 - Silicon carbide horizontal channel buffered gate semiconductor devices (2001-08-28),

2. 6218254 - Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices (2001-04-17),

3. 6121633 - Latch-up free power MOS-bipolar transistor (2000-09-18),

4. 612163 - Latch-up free power MOS-bipolar transistor (2000-09-19),

5. 6107142 - Self-aligned methods of fabricating silicon carbide power devices by (2000-08-22),

6. 6025289 - Colorless silicon carbide crystals (2000-02-15),

7. 6011279 - Silicon carbide field controlled bipolar switch (2000-01-04),

8. 5972801 - Process for reducing defects in oxide layers on silicon carbide (1999-10-26),

9. 5969378 - Latch-up free power UMOS-bipolar transistor (1999-10-19),

10. 5923946 - Recovery of surface-ready silicon carbide substrates (1999-07-13),

11. 5912477 - High efficiency light emitting diodes (1999-06-15),

12. 5838706 - Low-strain laser structures with group III nitride active layers (1998-11-17),

13. 5831288 - Silicon carbide metal-insulator semiconductor field effect transistor (1998-11-03),

14. 5812105 - Led dot matrix drive method and apparatus (1998-09-22),

15. 5776837 - Method of obtaining high quality silicon dioxide passivation on silicon (1998-07-07),

Cree Research Inc. is a leading innovator and manufacturer of semiconductors and lighting products. With a focus on silicon carbide (SiC) and gallium nitride (GaN) devices, Cree is driving advancements in various industries, including power and radio frequency (RF) applications, lighting, and electric vehicles. Their cutting-edge technologies are renowned for delivering higher performance, energy efficiency, and reliability. Cree’s commitment to sustainability is reflected in its dedication to reducing global energy consumption and environmental impact through its innovative products.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Dec 16 2025

50 Patents

#21 in Durham, NC

#158 in North Carolina

#6,766 in US

#13,582 in the World

Durham, NC, United States of America

Cree Research Inc.

Forward Citations = 8,660

32 inventors:

John Williams Palmour (18 out of 84 patents)

John Adam Edmond (17 out of 180 patents)

Calvin H Carter, Jr (9 out of 29 patents)

4. Ranbir Singh (9 out of 20 patents)

5. Hua-shuang Kong (9 out of 38 patents)

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