The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2000
Filed:
Dec. 04, 1997
Applicant:
Inventors:
Calvin H Carter, Cary, NC (US);
Valeri F Tsvetkov, Durham, NC (US);
Robert C Glass, Chapel Hill, NC (US);
Assignee:
Cree Research, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C04B / ; C30B / ;
U.S. Cl.
CPC ...
501 86 ; 252 / ; 117951 ; 501 88 ;
Abstract
Large single crystals of silicon carbide are grown in a furnace sublimation system. The crystals are grown with compensating levels of p-type and n-type dopants (i.e., roughly equal levels of the two dopants) in order to produce a crystal that is essentially colorless. The crystal may be cut and fashioned into synthetic gemstones having extraordinary toughness and hardness, and a brilliance meeting or exceeding that of diamond.