Durham, NC, United States of America

Calvin H Carter, Jr

This inventor holds 29 USPTO granted patents and 1 published patent application and 3 EPO patents, primarily in Silicon Carbide Technology. Top assignees: Cree Gmbh, Cree Research Inc., North Carolina State University. Active years: 1989-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Calvin H Carter, Jr. Retrieved from https://idiyas.com/inventor/calvin-h-carter-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29 

% Patents Active = 100.0

 

Average Co-Inventor Count = 3.5

ph-index = 18

Forward Citations = 2,405(Granted Patents)


Location History:

  • Raleigh, NC (US) (1989 - 1993)
  • Cary, NC (US) (1992 - 2011)
  • Durham, NC (US) (2005 - 2015)

Company Filing History:


Years Active: 1989-2015

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Areas of Expertise:
Silicon Carbide
Crystal Growth
Bipolar Semiconductor
Minority Carrier Lifetimes
Single Crystal Wafer
Thin Films
Nitrogen Contamination
Power Semiconductor Devices
Epitaxial Growth
Light Emitting Diodes
Ultraviolet Radiation Detector
Neutron Transmutation Doping
29 patents (USPTO):Explore Patents

Title: Innovator Spotlight: Calvin H Carter, Jr

Introduction:

Calvin H Carter, Jr, a prolific inventor hailing from Durham, NC, has left a remarkable mark in the field of silicon carbide technology. With an impressive portfolio of 29 patents, his groundbreaking work has significantly advanced the manufacturing processes in this crucial industry.

Latest Patents:

One of Carter's latest patents revolves around the development of micropipe-free silicon carbide crystals. This innovation involves a meticulous method of growing single crystal SiC that is devoid of micropipes, crucial for enhancing the material's purity and performance.

Another notable patent by Carter focuses on a process for producing silicon carbide crystals with increased minority carrier lifetimes. By carefully controlling the crystal's recombination centers, this method leads to crystals with enhanced electrical properties, paving the way for cutting-edge applications in semiconductor technology.

Career Highlights:

Throughout his career, Carter has made substantial contributions to companies like Cree GmbH and Cree Research Inc., where his expertise has been instrumental in driving technological advancements in the field of silicon carbide.

Collaborations:

During his tenure in the industry, Carter has collaborated with esteemed professionals such as Valeri Fedorovich Tsvetkov and Hudson McDonald Hobgood. These collaborations have not only enriched his work but have also fostered a culture of innovation and knowledge-sharing within the industry.

Conclusion:

In conclusion, Calvin H Carter, Jr stands out as a visionary inventor whose work continues to shape the landscape of silicon carbide technology. His relentless pursuit of excellence and dedication to innovation make him a true pioneer in his field, inspiring future generations of inventors to push the boundaries of what is possible in materials science and semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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