Durham, NC, United States of America

Calvin H Carter, Jr

USPTO Granted Patents = 29 

 

Average Co-Inventor Count = 3.5

ph-index = 18

Forward Citations = 2,388(Granted Patents)


Location History:

  • Raleigh, NC (US) (1989 - 1993)
  • Cary, NC (US) (1992 - 2011)
  • Durham, NC (US) (2005 - 2015)

Company Filing History:


Years Active: 1989-2015

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29 patents (USPTO):

Title: Innovator Spotlight: Calvin H Carter, Jr

Introduction:

Calvin H Carter, Jr, a prolific inventor hailing from Durham, NC, has left a remarkable mark in the field of silicon carbide technology. With an impressive portfolio of 29 patents, his groundbreaking work has significantly advanced the manufacturing processes in this crucial industry.

Latest Patents:

One of Carter's latest patents revolves around the development of micropipe-free silicon carbide crystals. This innovation involves a meticulous method of growing single crystal SiC that is devoid of micropipes, crucial for enhancing the material's purity and performance.

Another notable patent by Carter focuses on a process for producing silicon carbide crystals with increased minority carrier lifetimes. By carefully controlling the crystal's recombination centers, this method leads to crystals with enhanced electrical properties, paving the way for cutting-edge applications in semiconductor technology.

Career Highlights:

Throughout his career, Carter has made substantial contributions to companies like Cree GmbH and Cree Research Inc., where his expertise has been instrumental in driving technological advancements in the field of silicon carbide.

Collaborations:

During his tenure in the industry, Carter has collaborated with esteemed professionals such as Valeri Fedorovich Tsvetkov and Hudson McDonald Hobgood. These collaborations have not only enriched his work but have also fostered a culture of innovation and knowledge-sharing within the industry.

Conclusion:

In conclusion, Calvin H Carter, Jr stands out as a visionary inventor whose work continues to shape the landscape of silicon carbide technology. His relentless pursuit of excellence and dedication to innovation make him a true pioneer in his field, inspiring future generations of inventors to push the boundaries of what is possible in materials science and semiconductor technology.

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