The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2007
Filed:
Jul. 28, 2003
George J. Fechko, Jr., Apex, NC (US);
Jason R. Jenny, Raleigh, NC (US);
Hudson M. Hobgood, Pittsboro, NC (US);
Valeri F. Tsvetkov, Durham, NC (US);
Calvin H. Carter, Jr., Durham, NC (US);
George J. Fechko, Jr., Apex, NC (US);
Jason R. Jenny, Raleigh, NC (US);
Hudson M. Hobgood, Pittsboro, NC (US);
Valeri F. Tsvetkov, Durham, NC (US);
Calvin H. Carter, Jr., Durham, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing an ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.