Company Filing History:
Years Active: 2007-2008
Title: Innovations of George J Fechko, Jr.
Introduction
George J Fechko, Jr. is a notable inventor based in Apex, NC (US), recognized for his contributions to the field of silicon carbide technology. With a total of three patents to his name, he has made significant advancements in the production of high-quality single crystal silicon carbide.
Latest Patents
Fechko's latest patents include a method for producing a one hundred millimeter single crystal silicon carbide wafer. This method involves positioning a seed crystal on a seed holder with a low porosity backing material that acts as a vapor barrier to silicon carbide sublimation. It minimizes temperature differences across the seed, thereby reducing the risk of defects in the growing crystal. Another patent focuses on the seeded single crystal silicon carbide growth, which enhances the quality of the crystal by optimizing the heat transfer between the seed crystal and the seed holder.
Career Highlights
Fechko is currently employed at Cree GmbH, a company known for its innovations in semiconductor technology. His work has contributed to the advancement of materials used in various electronic applications, particularly in the realm of power electronics and optoelectronics.
Collaborations
Throughout his career, Fechko has collaborated with talented individuals such as Hudson McDonald Hobgood and Jason Ronald Jenny. These collaborations have fostered an environment of innovation and have led to the successful development of new technologies.
Conclusion
George J Fechko, Jr. continues to be a driving force in the field of silicon carbide technology, with his patents reflecting his commitment to innovation and excellence. His work at Cree GmbH and collaborations with other professionals highlight his significant contributions to the industry.