Cree Gmbh

George J Fechko, Jr

Valeri Fedorovich Tsvetkov

Calvin H Carter, Jr

Hudson McDonald Hobgood

Jason Ronald Jenny

Robert Tyler Leonard

David Phillip Malta

Adrian Powell

Mark Brady

Stephan Georg Mueller

A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbide sublimation from the seed and that minimizes the difference in thermal conductivity between the seed and the backing material to minimize or eliminate temperature differences across the seed and likewise minimize or eliminate vapor transport from the rear of the seed that would otherwise initiate and propagate defects in the growing crystal.

One hundred millimeter single crystal silicon carbide wafer

A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

Seeded single crystal silicon carbide growth and resulting crystals

The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing an ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.

Reducing nitrogen content in silicon carbide crystals by sublimation growth in a hydrogen-containing ambient

Growing community of inventors

Apex, NC, United States of America

George J Fechko, Jr