The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 29, 2008
Filed:
Oct. 12, 2005
Hudson M. Hobgood, Pittsboro, NC (US);
Jason R. Jenny, Raleigh, NC (US);
David Phillip Malta, Raleigh, NC (US);
Valeri F. Tsvetkov, Durham, NC (US);
Calvin H. Carter, Jr., Durham, NC (US);
Robert Tyler Leonard, Raleigh, NC (US);
George J. Fechko, Jr., Apex, NC (US);
Hudson M. Hobgood, Pittsboro, NC (US);
Jason R. Jenny, Raleigh, NC (US);
David Phillip Malta, Raleigh, NC (US);
Valeri F. Tsvetkov, Durham, NC (US);
Calvin H. Carter, Jr., Durham, NC (US);
Robert Tyler Leonard, Raleigh, NC (US);
George J. Fechko, Jr., Apex, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbide sublimation from the seed and that minimizes the difference in thermal conductivity between the seed and the backing material to minimize or eliminate temperature differences across the seed and likewise minimize or eliminate vapor transport from the rear of the seed that would otherwise initiate and propagate defects in the growing crystal.