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For the Inventor, By the Inventor

Durham, NC, United States of America

Valeri Fedorovich Tsvetkov

This inventor holds 39 USPTO granted patents and 12 published patent applications and 12 EPO patents, primarily in Silicon Carbide Technology. Top assignees: Cree Gmbh, Wolfspeed, Inc., Cree Research Inc.. Active years: 1998-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Valeri Fedorovich Tsvetkov. Retrieved from https://idiyas.com/inventor/valeri-fedorovich-tsvetkov

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 39 

% Patents Active = 97.4

 

Average Co-Inventor Count = 4.1

ph-index = 16

Forward Citations = 755(Granted Patents)


Location History:

  • Gasburg, VA (US) (2012 - 2015)
  • Durham, NC (US) (1998 - 2024)

Company Filing History:

goldMedal32 out of 2,307 
 
Cree Gmbh
 patents
silverMedal5 out of 251 
 
Wolfspeed, Inc.
 patents
bronzeMedal2 out of 50 
 
Cree Research Inc.
 patents

Years Active: 1998-2025

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Areas of Expertise:
Silicon Carbide Wafers
Single Crystal Growth
Crystallographic Stress
Optical Absorption
Thermal Stresses
High Purity Crystals
LED Fabrication
Dislocation Reduction
Sublimation Growth
Neutron Transmutation Doping
Colorless Gemstones
Power Semiconductor Devices
39 patents (USPTO):Explore Patents
1. 12473661 - Large diameter silicon carbide wafers (2025-11-18),
2. 12125701 - Large dimension silicon carbide single crystalline materials with reduced crystallographic stress (2024-10-22),
3. 12054850 - Large diameter silicon carbide wafers (2024-08-06),
4. 12024794 - Reduced optical absorption for silicon carbide crystalline materials (2024-07-02),
5. 11519098 - Dislocation distribution for silicon carbide crystalline materials (2022-12-06),
6. 9790619 - Method of producing high quality silicon carbide crystal in a seeded growth system (2017-10-17),
7. 9200381 - Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface (2015-12-01),
8. 9059118 - Method for producing semi-insulating resistivity in high purity silicon carbide crystals (2015-06-16),
9. 8785946 - Low 1C screw dislocation 3 inch silicon carbide wafer (2014-07-22),
10. 8618553 - Process for producing silicon carbide crystals having increased minority carrier lifetimes (2013-12-31),
11. 8384090 - Low 1C screw dislocation 3 inch silicon carbide wafer (2013-02-26),
12. 8163086 - Halogen assisted physical vapor transport method for silicon carbide growth (2012-04-24),
13. 8147991 - One hundred millimeter single crystal silicon carbide wafer (2012-04-03),
14. 7943954 - LED fabrication via ion implant isolation (2011-05-17),
15. 7811943 - Process for producing silicon carbide crystals having increased minority carrier lifetimes (2010-10-12),

Title: Valeri Fedorovich Tsvetkov - Innovator Extraordinaire

Introduction:

Valeri Fedorovich Tsvetkov is a renowned inventor based in Durham, NC, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents:

Valeri Fedorovich Tsvetkov holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovative thinking.

Career Highlights:

With a career spanning over two decades, Valeri Fedorovich Tsvetkov has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized various industries.

Collaborations:

Valeri Fedorovich Tsvetkov has collaborated with top scientists, engineers, and researchers from around the world, fostering a culture of innovation and knowledge-sharing to drive progress and change.

Conclusion:

In conclusion, Valeri Fedorovich Tsvetkov's passion for innovation, coupled with his relentless drive to push the boundaries of what is possible, has solidified his position as a trailblazer in the world of inventions and patents.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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