The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 02, 2024

Filed:

Jun. 17, 2021
Applicant:

Wolfspeed, Inc., Durham, NC (US);

Inventors:

Robert Tyler Leonard, Raleigh, NC (US);

Elif Balkas, Cary, NC (US);

Valeri F. Tsvetkov, Durham, NC (US);

Yuri Khlebnikov, Raleigh, NC (US);

Kathryn A. O'Hara, Raleigh, NC (US);

Simon Bubel, Carrboro, NC (US);

David P. Malta, Raleigh, NC (US);

Assignee:

Wolfspeed, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 33/02 (2006.01); H01L 33/34 (2010.01);
U.S. Cl.
CPC ...
C30B 33/02 (2013.01); H01L 33/34 (2013.01);
Abstract

Silicon carbide (SiC) crystalline materials and related methods are disclosed that provide SiC crystalline materials with reduced optical absorption. In certain aspects, SiC crystalline materials with reduced absorption coefficients for wavelengths of light within the visible spectrum are disclosed. Various peaks in absorption over a wavelength spectrum may be reduced in SiC crystalline materials to improve overall absorption coefficient uniformity across the visible spectrum. By providing such improvements in absorption coefficients for SiC crystalline materials, reduced reflection and transmission losses of light in corresponding devices may be realized. Related methods are disclosed that include various combinations of crystalline growth, with and without various post-growth thermal conditioning steps.


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