The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Jul. 22, 2009
Yifeng Wu, Goleta, CA (US);
Gerald H. Negley, Carrboro, NC (US);
David B. Slater, Jr., Durham, NC (US);
Valeri F. Tsvetkov, Durham, NC (US);
Alexander Suvorov, Durham, NC (US);
Yifeng Wu, Goleta, CA (US);
Gerald H. Negley, Carrboro, NC (US);
David B. Slater, Jr., Durham, NC (US);
Valeri F. Tsvetkov, Durham, NC (US);
Alexander Suvorov, Durham, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.