The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Jun. 24, 2009
Jason Ronald Jenny, Wake Forest, NC (US);
David Phillip Malta, Raleigh, NC (US);
Hudson Mcdonald Hobgood, Pittsboro, NC (US);
Stephan Mueller, Troy, NY (US);
Valeri F. Tsvetkov, Gasburg, VA (US);
Jason Ronald Jenny, Wake Forest, NC (US);
David Phillip Malta, Raleigh, NC (US);
Hudson McDonald Hobgood, Pittsboro, NC (US);
Stephan Mueller, Troy, NY (US);
Valeri F. Tsvetkov, Gasburg, VA (US);
Cree, Inc., Durham, NC (US);
Abstract
A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of heating a silicon carbide crystal having a first concentration of point defects to a temperature that thermodynamically increases the number of point defects and resulting states in the crystal, and then cooling the heated crystal at a sufficiently rapid rate to maintain an increased concentration of point defects in the cooled crystal.