The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2024
Filed:
Dec. 15, 2020
Wolfspeed, Inc., Durham, NC (US);
Yuri Khlebnikov, Raleigh, NC (US);
Varad R. Sakhalkar, Morrisville, NC (US);
Caleb A. Kent, Durham, NC (US);
Valeri F. Tsvetkov, Durham, NC (US);
Michael J. Paisley, Raleigh, NC (US);
Oleksandr Kramarenko, Durham, NC (US);
Matthew David Conrad, Durham, NC (US);
Eugene Deyneka, Raleigh, NC (US);
Steven Griffiths, Morrisville, NC (US);
Simon Bubel, Carrboro, NC (US);
Adrian R. Powell, Cary, NC (US);
Robert Tyler Leonard, Raleigh, NC (US);
Elif Balkas, Cary, NC (US);
Curt Progl, Raleigh, NC (US);
Michael Fusco, Wake Forest, NC (US);
Alexander Shveyd, Chapel Hill, NC (US);
Kathy Doverspike, Cary, NC (US);
Lukas Nattermann, Chapel Hill, NC (US);
Wolfspeed, Inc., Durham, NC (US);
Abstract
Silicon carbide (SiC) materials including SiC wafers and SiC boules and related methods are disclosed that provide large dimension SiC wafers with reduced crystallographic stress. Growth conditions for SiC materials include maintaining a generally convex growth surface of SiC crystals, adjusting differences in front-side to back-side thermal profiles of growing SiC crystals, supplying sufficient source flux to allow commercially viable growth rates for SiC crystals, and reducing the inclusion of contaminants or non-SiC particles in SiC source materials and corresponding SiC crystals. By forming larger dimension SiC crystals that exhibit lower crystallographic stress, overall dislocation densities that are associated with missing or additional planes of atoms may be reduced, thereby improving crystal quality and usable SiC crystal growth heights.