The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2024
Filed:
Dec. 17, 2020
Wolfspeed, Inc., Durham, NC (US);
Yuri Khlebnikov, Raleigh, NC (US);
Varad R. Sakhalkar, Morrisville, NC (US);
Caleb A. Kent, Durham, NC (US);
Valeri F. Tsvetkov, Durham, NC (US);
Michael J. Paisley, Raleigh, NC (US);
Oleksandr Kramarenko, Durham, NC (US);
Matthew David Conrad, Durham, NC (US);
Eugene Deyneka, Raleigh, NC (US);
Steven Griffiths, Morrisville, NC (US);
Simon Bubel, Carrboro, NC (US);
Adrian R. Powell, Cary, NC (US);
Robert Tyler Leonard, Raleigh, NC (US);
Elif Balkas, Cary, NC (US);
Jeffrey C. Seaman, Louisburg, NC (US);
WOLFSPEED, INC., Durham, NC (US);
Abstract
Silicon carbide (SiC) wafers and related methods are disclosed that include large diameter SiC wafers with wafer shape characteristics suitable for semiconductor manufacturing. Large diameter SiC wafers are disclosed that have reduced deformation related to stress and strain effects associated with forming such SiC wafers. As described herein, wafer shape and flatness characteristics may be improved by reducing crystallographic stress profiles during growth of SiC crystal boules or ingots. Wafer shape and flatness characteristics may also be improved after individual SiC wafers have been separated from corresponding SiC crystal boules. In this regard, SiC wafers and related methods are disclosed that include large diameter SiC wafers with suitable crystal quality and wafer shape characteristics including low values for wafer bow, warp, and thickness variation.