The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2010
Filed:
Feb. 07, 2005
Calvin H. Carter, Jr., Durham, NC (US);
Jason R. Jenny, Wake Forest, NC (US);
David P. Malta, Raleigh, NC (US);
Hudson M. Hobgood, Pittsboro, NC (US);
Valeri F. Tsvetkov, Durham, NC (US);
Mrinal K. Das, Durham, NC (US);
Calvin H. Carter, Jr., Durham, NC (US);
Jason R. Jenny, Wake Forest, NC (US);
David P. Malta, Raleigh, NC (US);
Hudson M. Hobgood, Pittsboro, NC (US);
Valeri F. Tsvetkov, Durham, NC (US);
Mrinal K. Das, Durham, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.