The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Jan. 29, 2020
Wolfspeed, Inc., Durham, NC (US);
Yuri Khlebnikov, Raleigh, NC (US);
Robert T. Leonard, Raleigh, NC (US);
Elif Balkas, Cary, NC (US);
Steven Griffiths, Morrisville, NC (US);
Valeri Tsvetkov, Durham, NC (US);
Michael Paisley, Raleigh, NC (US);
Wolfspeed, Inc., Durham, NC (US);
Abstract
Silicon carbide (SiC) wafers, SiC boules, and related methods are disclosed that provide improved dislocation distributions. SiC boules are provided that demonstrate reduced dislocation densities and improved dislocation uniformity across longer boule lengths. Corresponding SiC wafers include reduced total dislocation density (TDD) values and improved TDD radial uniformity. Growth conditions for SiC crystalline materials include providing source materials in oversaturated quantities where amounts of the source materials present during growth are significantly higher than what would typically be required. Such SiC crystalline materials and related methods are suitable for providing large diameter SiC boules and corresponding SiC wafers with improved crystalline quality.