The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2008
Filed:
Nov. 16, 2006
Joseph J. Sumakeris, Apex, NC (US);
Ranbir Singh, Apex, NC (US);
Michael James Paisley, Garner, NC (US);
Stephan Georg Mueller, Durham, NC (US);
Hudson M. Hobgood, Pittsboro, NC (US);
Calvin H. Carter, Jr., Cary, NC (US);
Albert Augustus Burk, Jr., Chapel Hill, NC (US);
Joseph J. Sumakeris, Apex, NC (US);
Ranbir Singh, Apex, NC (US);
Michael James Paisley, Garner, NC (US);
Stephan Georg Mueller, Durham, NC (US);
Hudson M. Hobgood, Pittsboro, NC (US);
Calvin H. Carter, Jr., Cary, NC (US);
Albert Augustus Burk, Jr., Chapel Hill, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A method of forming a bipolar device includes forming at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide on a substrate. Stacking faults that grow under forward operation of the device are segregated from at least one of the interfaces between the active region and the remainder of the device. The method of forming bipolar devices includes growing at least one of the epitaxial layers to a thickness greater than the minority carrier diffusion length in that layer. The method also increases the doping concentration of epitaxial layers surrounding the drift region to decrease minority carrier lifetimes therein.